Depth Profiling

Deep and shallow depth profiling with the CAMECA IMS 7f

In semiconductor technology, materials and thus analytical problems change rapidly. Thanks to its outstanding depth profiling capabilities, the CAMECA IMS 7f is widely used for dopant monitoring in the semiconductor industry, and applied to different species and material systems. Among its instrumental advantages: two high brightness ions sources (Cs+ and O2+), high transmission, high mass resolution…

Excellent detection limits for deep implants

For deep implants, depth profiles up to several microns in-depth can be analyzed within minutes, with impressive sensitivity and high dynamic range. For the three main Si dopants (B, P and As), the detection limit is in the ppb range for an analysis of only 30x30µm². Opposite to TOF-SIMS, the detection limits are improved in the IMS 7f when increasing sputtering speed.

Phosphorus in silicon:
High sample throughput for deep implants. A sputter rate higher than 0.5µm/min, and a detection limit of 5x10¹³ at/cm³ (1ppb) are shown. High Mass Resolution is used to separate ³⁰SiH from ³¹P.

Optimized depth resolution for shallow implants

On the CAMECA IMS 7f, the impact energy can be continuously reduced down to 500eV, providing excellent depth resolution while keeping good sensitivity. High sputter rate (2nm/min with 500eV O2+, 45° in Silicon) can be maintained at low impact energy with the accel/decel optics for the duoplasmatron. A high sensitivity is maintained at low energy even for heavy ions (cesium clusters, noble metals...) thanks to the Electron Multiplier post-acceleration

Ultra shallow implant technology:
ultra low energy (O2+ 500V, 45°) depth profiling
 for investigation on annealing conditions