Cesium 16 keV, 1.5 pA, beam diameter 100 nm. High Mass Resolution.
256 x 256 pixels, acquisition time: 30 minutes. 
Bulk sample, no charge compensation, gold coating.

After thermal treatment of the ceramic, the Silicon dopant segregates toward the grain boundaries. Analysis and imaging of this phenomenon was impossible without the NanoSIMS due to the simultaneous challenges of:

• Strongly  insulating material (Auger electron spectroscopy impossible).
• Low concentration (maximum about 0.1 at.% Silicon at grain boundary): Auger/TEM impossible. The unique sensitivity (transmission) of the NanoSIMS 50 allows trace imaging in a reasonable time.
• Lateral resolution: the minimum beam size on the NanoSIMS is 40 nm. It was adjusted here to 100 nm to keep the acquisition time reasonable (beam current).