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Scientific Publications: IMS 7f & Wf product lines, quadrupole SIMS

IMS 7f / IMS xf - IMS 7f-GEO - IMS Wf / SC Ultra - Quad SIMS 4550

IMS 7f / IMS xf

Highly sensitive secondary ion mass spectrometric analysis of time variation of hydrogen spatial distribution in austenitic stainless steel at room temperature in vacuum. Tohru Awane, Yoshihiro Fukushima, Takashi Matsuo, Yukitaka Murakami, Shiro Miwa. International Journal of Hydrogen Energy. Volume 39, Issue 2, Pages 1164–1172, 13 January 2014

Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties.
R. Krishnan, C. David, P. K. Ajikumar, et al. Journal of Materials, vol. 2013, Article ID 128986, 5 pages, 2013

SIMS depth profiling of implanted helium in pure iron using CsHe+ detection mode. H. Lefaix-Jeuland, S. Moll, F. Legendre, F. Jomard. Nuclear Instruments and Methods in Physics Research B 295 (2013) 69–71

Determining the americium transmutation rate and fission rate by post-irradiation examination within the scope of the ECRIX-H experiment. J. Lamontagne, Y. Pontillon, E. Esbelin, S. Béjaoui, B. Pasquet, P. Bourdot, J.M. Bonnerot. Journal of Nuclear Materials 440 (2013) 366–376

Normal-incidence Electron Gun alignment method for negative ion analysis on insulators by magnetic sector SIMS. J. Chen, S. Schauer, R. Hervig. Nuclear Instruments and Methods in Physics Research B 295 (2013) 50–54

SIMS analysis of zinc oxide LED structures: quantification and analysis issues. Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T. and Griffis, D. P., Surf. Interface Anal., 45: 352–355 (2013)


Uranium Microdistribution in Renal Cortex of Rats after Chronic Exposure: A Study by Secondary Ion Mass Spectrometry Microscopy. Christine Tessier, David Suhard, François Rebière, Maâmar Souidi, Isabelle Dublineau and Michelle Agarande. Microsc. Microanal. 18, 123–133, 2012

Influence of Impurities in Module Packaging on Potential-Induced Degradation. Peter Hacke, Stephen Glick, Steve Johnston, Robert Reedy, Joel Pankow, Kent Terwilliger, and Sarah Kurtz. National Renewable Energy Laboratory Technical Report. NREL/TP-5200-56301 September 2012

Low resistance screen-printed Ag contacts to POCl3 emitters with low saturation current density for high efficiency Si solar cells. Cooper, I.B., Tate, K., Carroll, A.F., Mikeska, K.R., Reedy, R.C., Rohatgi, A. Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE (2012)

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs. Kevin L. Schulte,William L. Rance, Robert C. Reedy, Aaron J. Ptak, David L. Young, Thomas F. Kuech. Journal of Crystal Growth 352 (2012) 253–257

Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting. Daniel Recht, Joseph T. Sullivan, Robert Reedy, Tonio Buonassisi, and Michael J. Aziz. Applied Physics Letters 100, 112112 (2012)

The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films. A.H. Mahan, M. S. Dabney, R. C. Reedy, D. Molina, and D. S. Ginley. J. Appl. Phys. 111, 103501 (2012)

Characterization of LED materials using dynamic SIMS. P. Peres, A. Merkulov, S.Y. Choi, F. Desse, M  Schuhmacher. Surface and Interface Analysis, published online 15 May 2012. DOI: 10.1002/sia.4952

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Protection Effect of ZrO2 Coating Layer on LiCoO2 Thin Film. Hye Jin Lee, Sang Cheol Nam and Yong Joon Park. Bull. Korean Chem. Soc. Vol. 32, No. 5, 1483 (2011)

A new approach to measuring D/H ratios with the CAMECA IMS-7f. Rong Liu, Sharon Hull and Mostafa Fayek. Surface and Interface Analysis Volume 43, Issue 1-2, pages 458–461, 2011

Reactive pulsed laser deposition and characterization of niobium nitride thin films. R. Krishnan, C. David, P.K. Ajikumar, S. Dash, A.K. Tyagi, V. Jayaram, Baldev Raj. Surface & Coatings Technology 206 (2011) 1196–1202

The Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells. Sergiu Shishiyanu, Rajendra Singh, Teodor Shishiyanu, Sally Asher, and Robert Reedy. IEEE Transactions on Electron Devices, Vol 58, N°. 3, March 2011

Elaboration and quantitative investigation of BCN-type films by dynamic SIMS using the MCsx+ mode. Wu, F., Valle, N., Fitzpatrick, R., Ekerdt, J. G., Houssiau, L. and Migeon, H.-N. Surf. Interface Anal., 43: 669–672 (2011)

Highly Sensitive Detection of Net Hydrogen Charged into Austenitic Stainless Steel with Secondary Ion Mass Spectrometry. Tohru Awane, Yoshihiro Fukushima, Takashi Matsuo, Saburo Matsuoka, Yukitaka Murakami, Shiro Miwa. Analytical Chemistry 2011, 83, 2667-2676


Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry. R. Krishnan, Tom Mathews, A.K. Balamurugan, S. Dash, A.K. Tyagi, Baldev Raj, Vikram Jayaram. Applied Surface Science 256 (2010) 3077–3080

Investigation on the magnesium segregation in low-magnesium aluminium alloys. Guillot, J., Valle, N., Maitre, E., Verdier, S. and Migeon, H.-N. Surf. Interface Anal., 42: 735–738 (2010)

Elemental and isotopic (29Si and 18O) tracing of glass alteration mechanisms. Nathalie Valle, Aurelie Verney-Carron, Jerome Sterpenich, Guy Libourel, Etienne Deloule, Patrick Jollivet. Geochimica et Cosmochimica Acta 74 (2010) 3412–3431

SIMS analytical technique for PV applications. P. Peres, A. Merkulov, F. Desse, and M. Schuhmacher. Surface and Interface Analysis, 28 June 2010; doi: 10.1002/sia.3525 

Dynamic SIMS applications for photovoltaic technology development.
A.N. Davis, P. Peres, A. Merkulov, F. Desse, S.Y. Choi, M. Schuhmacher. Microscopy and Microanalysis (2010), Cambridge University Press, 16:1392-1393, doi:10.1017/S1431927610062975


Detection and analysis of the microdistribution of uranium in the gills of freshwater Corbicula fluminea by SIMS technique. C. Tessier, D. Suhard, O. Simon, M. Floriani, F. Rebière, J.-R. Jourdain. Nuclear Instruments and Methods in Physics Research B 267 (2009) 1931–1935

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Characterisation of pebble surfaces coated with biogenic manganese oxides by SIMS, XPS and TEM. H. Seyama, Y. Tani, N. Miyata, M. Soma and K. Iwahori. App. Surf. Science 255 (2008) 1509

Dependence of the precision of Uranium isotope ratio on particle size in individual particle analysis with SIMS. F. Esaka, K. Watanabe, T. Onodera, C.-G. Lee, M. Magara, S. Sakurai and S. Usuda. App. Surf. Science 255 (2008) 1512

Challenges of biological sample preparation for SIMS imaging of elements and molecules at subcellular resolution. S. Chandra. App. Surf. Science 255 (2008) 1273

Dynamic SIMS ion microscopy imaging of individual bacterial cells for studies of isotopically labelled molecules. S. Chandra, G. Pumphrey, J. M. Abraham and E. L. Madsen. App. Surf. Science 255 (2008) 847

SIMS analysis of 83Kr implanted UO2. S. Portier, S. Brémier R. Hasnaoui, O. Bildstein and C.T. Walker. App. Surf. Science 255 (2008) 1323

SIMS characterization of segregation in InAs/GaAs heterostructures. S. Gallardo Y. Kudriatsev, A. Villegas, G. Ramírez, R. Asomoza, E. Cruz-Hernández, J.S. Rojas-Ramirez and M. López-López. App. Surf. Science 255 (2008) 1341

Towards quantitative depth profiling with high spatial and high depth resolution. N. Vanhove, P. Lievens and W. Vandervorst. App. Surf. Science 255 (2008) 1360

Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method. C. Dubois, G. Prudon, B. Gautier and J.-C. Dupuy. App. Surf. Science 255 (2008) 1377

Oxygen flooding and sample cooling during depth profiling of HfSiON thin films. S. Miwa. App. Surf. Science 255 (2008) 1384

Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film. T. Asakawa, D. Nagano, S. Denda and K. Miyairi. App. Surf. Science 255 (2008) 1387

SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions. O. Koudriavtseva, A. Morales-Acevedo, Yu. Kudriavtsev, S. Gallardo, R. Asomoza, R. Mendoza-Perez, J. Sastre-Hernandez and G. Contreras-Puente. App. Surf. Science 255 (2008) 1423


n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation. T. Kociniewski, J. Barjon, M.-A. Pinault, F. Jomard, A. Lusson, D. Ballutaud,O. Gorochov, J. M. Laroche, E. Rzepka, J. Chevallier, and C. Saguy. phys. stat. sol. (a) 203, No. 12, 3136–3141 (2006)

Useful ion yields for Cameca IMS 3f and 6f SIMS: Limits on quantitative analysis. Richard L. Hervig, Frank K. Mazdab, Peter Williams, Yunbin Guan, Gary R. Huss, Laurie A. Leshin. Chemical Geology 227 (2006) 83– 99

Application of SIMS analyses on oxygen transport in SOFC materials.

N. Sakai, K. Yamaji, T. Horita, H. Kishimoto, M.E. Brito, H. Yokokawa and Y. Uchimoto. App. Surf. Science 252 (2006) 7045

Secondary ionization mass spectrometric analysis of impurity element isotope ratios in nuclear reactor materials. D.C. Gerlach, J.B. Cliff, D.E. Hurley, B.D. Reid, W.W. Little, G.H. Meriwether, A.J. Wickham and T.A. Simmons. App. Surf. Science 252 (2006) 7041

SIMS analysis of nitrogen in various metals and ZnO. Y. Li, S. Wang and S. P. Smith. App. Surf. Science 252 (2006) 7066

SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO. W.S. Fulton, D.E. Sykes and G.C. Smith. App. Surf. Science 252 (2006) 7074

Back side SIMS analysis of hafnium silicate. C. Gu, F.A. Stevie, J. Bennett, R. Garcia and D.P. Griffis. App. Surf. Science 252 (2006) 7179

The reduction of the change of secondary ions yield in the thin SiON/Si system. J. Sameshima, H. Yamamoto, T. Hasegawa, T. Nishina, T. Nishitani, K. Yoshikawa and A. Karen. App. Surf. Science 252 (2006) 7190

Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water. P. Holliger, C. Hobbs, D. Jalabert, F. Martin, F. Pierre, G. Reimbold and P. Rivallin. App. Surf. Science 252 (2006) 7194

SIMS quantitative depth profiling of matrix elements in semiconductor layers. G. Guryanov, T.P. St. Clair, R. Bhat, C. Caneau, S. Nikishin, B. Borisov and A. Budrevich. App. Surf. Science 252 (2006) 7208

SIMS depth profiling of deuterium labeled polymers in polymer multilayers. S. E. Harton, F. A. Stevie, D. P. Griffis and H. Ade. App. Surf. Science 252 (2006) 7224-7227

SIMS quantification of matrix and impurity species in AlxGa1−xN. C.J. Gu, F.A. Stevie, C.J. Hitzman, Y.N. Saripalli, M. Johnson and D.P. Griffis. App. Surf. Science 252 (2006) 7228

High sensitivity analysis of atmospheric gas elements. S. Miwa, I. Nomachia and H. Kitajima. App. Surf. Science 252 (2006) 7247

SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films. H. Haneda, T. Ohgaki, I. Sakaguchi, H. Ryoken, N. Ohashi and A. Yasumori. App. Surf. Science 252 (2006) 7265


Improved automation system for the CAMECA IMS 7f.



P. Peres, A. Merkulov, E. de Chambost, M. Schuhmacher, Poster for SIMS XV, Manchester, UK, September 2005

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Al-Mg systematics of hibonite-bearing Ca,Al-rich inclusions from Ningqiang. Weibiao HSU, Yunbin GUAN, and Ying WANG, Meteoritics & Planetary Science 46, Nr 5, 719–728 (2011)

Lunar apatite with terrestrial volatile abundances. Jeremy W. Boyce, Yang Liu, George R. Rossman, Yunbin Guan, John M. Eiler, Edward M. Stolper, & Lawrence A. Taylor, NATURE Vol 466, p. 466-468 (2010)

The effect of sulfate concentration on (sub)millimeter-scale sulfide δ34S in hypersaline cyanobacterial mats over the diurnal cycle.
D. A. Fike et al, Geochem. et Cosmochem. Acta. 73, 6187 (2009)

High resolution SIMS-based sulfide δ34S: A new tool for characterizing microbial activity in a variety of depositional environments. D. Fike et al, Goldschmidt conference, June 2009

New capabilities for small-scale and high-precision SIMS analyses. J. M. Eiler, Goldschmidt conference, June 2009

Understanding the origin and diagenetic history of multiple sulfur isotope signals in late Archean sedimentary rocks. W. W. Fischer et al, American Geophysical Union, Fall Meeting 2008

Stable isotope variation along the direction of growth in echinoderm plates. T. A. Dexter, 2008 Joint Annual Meeting, Oct. 2008

SIMS measurements on oxygen isotopic compositions of chondrules and matrix in Yamato 691, EH3 chondrite. B.-G. Choi et al, Lunar Planet. Sci. XXXIX (2008)

SIMS-based approaches to understanding sulfur cycling over earth history. D. A. Fike et al, 2008 Fall meeting of the American Geophysical Union

Stable isotope variation between growth lines on the blastoid pentremites. T. A. Dexter, Geological Society of America, Southeastern section, 57th Annual meeting, April 2008

CAMECA IMS 7f-GEO: Specialized SIMS tool for geosciences.
 Paula Peres, Emmanuel de Chambost and Michel Schuhmacher. Applied Surface Science, Volume 255, Issue 4, 15 December 2008, pp 1472-1475


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IMS Wf / SC Ultra

Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling. D. Kouzminov, A. Merkulov, E. Arevalo, H.-J. Grossmann. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5138.

The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen. A. Merkulov. Surf. and Interface Analysis, 5 Aug 2012, DOI: 10.1002/sia.5132 

Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants.
A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588  

EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA. AIP Conf. Proc. Vol. 1066 (2008), 109-112

Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805

Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433

Depth profiling of ultra-thin oxynitride date dielectrics by using MCs@+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1437

Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547.

SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211

Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315

Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214

SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762

Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953


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Quadrupole SIMS

Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010

Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs. C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008

SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004

Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114

Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4

Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)

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