Scientific Publications: IMS 7f & Wf product lines, quadrupole SIMS

IMS 7f / IMS xf - IMS 7f-GEO - IMS Wf / SC Ultra - Quad SIMS 4550

IMS 7f / IMS xf

High Sensitive Detection of Net Hydrogen Charged into Austenitic Stainless Steel with Secondary Ion Mass. Tohru Awane, Yoshihiro Fukushima, Takashi Matsuo, Saburo Matsuoka, Yukitaka Murakami, Shiro Miwa. Analytical Chemistry 2011, 83, 2667-2676.

SIMS analytical technique for PV applications. P. Peres, A. Merkulov, F. Desse, and M. Schuhmacher. Surface and Interface Analysis, 28 June 2010; doi: 10.1002/sia.3525. 

Dynamic SIMS applications for photovoltaic technology development. A.N. Davis, P. Peres, A. Merkulov, F. Desse, S.Y. Choi, M. Schuhmacher. Microscopy and Microanalysis (2010), Cambridge University Press, 16:1392-1393, doi:10.1017/S1431927610062975

Characterisation of pebble surfaces coated with biogenic manganese oxides by SIMS, XPS and TEM. H. Seyama, Y. Tani, N. Miyata, M. Soma and K. Iwahori. App. Surf. Science 255 (2008) 1509

Dependence of the precision of Uranium isotope ratio on particle size in individual particle analysis with SIMS. F. Esaka, K. Watanabe, T. Onodera, C.-G. Lee, M. Magara, S. Sakurai and S. Usuda. App. Surf. Science 255 (2008) 1512

Challenges of biological sample preparation for SIMS imaging of elements and molecules at subcellular resolution. S. Chandra. App. Surf. Science 255 (2008) 1273

Dynamic SIMS ion microscopy imaging of individual bacterial cells for studies of isotopically labelled molecules. S. Chandra, G. Pumphrey, J. M. Abraham and E. L. Madsen. App. Surf. Science 255 (2008) 847

SIMS analysis of 83Kr implanted UO2. S. Portier, S. Brémier R. Hasnaoui, O. Bildstein and C.T. Walker. App. Surf. Science 255 (2008) 1323

SIMS characterization of segregation in InAs/GaAs heterostructures. S. Gallardo Y. Kudriatsev, A. Villegas, G. Ramírez, R. Asomoza, E. Cruz-Hernández, J.S. Rojas-Ramirez and M. López-López. App. Surf. Science 255 (2008) 1341

Towards quantitative depth profiling with high spatial and high depth resolution. N. Vanhove, P. Lievens and W. Vandervorst. App. Surf. Science 255 (2008) 1360

Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method. C. Dubois, G. Prudon, B. Gautier and J.-C. Dupuy. App. Surf. Science 255 (2008) 1377

Oxygen flooding and sample cooling during depth profiling of HfSiON thin films. S. Miwa. App. Surf. Science 255 (2008) 1384

Influence of primary ion beam irradiation conditions on the depth profile of hydrogen in tantalum film. T. Asakawa, D. Nagano, S. Denda and K. Miyairi. App. Surf. Science 255 (2008) 1387

SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions. O. Koudriavtseva, A. Morales-Acevedo, Yu. Kudriavtsev, S. Gallardo, R. Asomoza, R. Mendoza-Perez, J. Sastre-Hernandez and G. Contreras-Puente. App. Surf. Science 255 (2008) 1423

Application of SIMS analyses on oxygen transport in SOFC materials. N. Sakai, K. Yamaji, T. Horita, H. Kishimoto, M.E. Brito, H. Yokokawa and Y. Uchimoto. App. Surf. Science 252 (2006) 7045

Secondary ionization mass spectrometric analysis of impurity element isotope ratios in nuclear reactor materials. D.C. Gerlach, J.B. Cliff, D.E. Hurley, B.D. Reid, W.W. Little, G.H. Meriwether, A.J. Wickham and T.A. Simmons. App. Surf. Science 252 (2006) 7041

SIMS analysis of nitrogen in various metals and ZnO. Y. Li, S. Wang and S. P. Smith. App. Surf. Science 252 (2006) 7066

SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO. W.S. Fulton, D.E. Sykes and G.C. Smith. App. Surf. Science 252 (2006) 7074

Back side SIMS analysis of hafnium silicate. C. Gu, F.A. Stevie, J. Bennett, R. Garcia and D.P. Griffis. App. Surf. Science 252 (2006) 7179

The reduction of the change of secondary ions yield in the thin SiON/Si system. J. Sameshima, H. Yamamoto, T. Hasegawa, T. Nishina, T. Nishitani, K. Yoshikawa and A. Karen. App. Surf. Science 252 (2006) 7190

Thermal effects on 1H and 2H distributions determined by SIMS in atomic layer deposition of HfO2 and Al2O3 using heavy water. P. Holliger, C. Hobbs, D. Jalabert, F. Martin, F. Pierre, G. Reimbold and P. Rivallin. App. Surf. Science 252 (2006) 7194

SIMS quantitative depth profiling of matrix elements in semiconductor layers. G. Guryanov, T.P. St. Clair, R. Bhat, C. Caneau, S. Nikishin, B. Borisov and A. Budrevich. App. Surf. Science 252 (2006) 7208

SIMS depth profiling of deuterium labeled polymers in polymer multilayers. S. E. Harton, F. A. Stevie, D. P. Griffis and H. Ade. App. Surf. Science 252 (2006) 7224-7227

SIMS quantification of matrix and impurity species in AlxGa1−xN. C.J. Gu, F.A. Stevie, C.J. Hitzman, Y.N. Saripalli, M. Johnson and D.P. Griffis. App. Surf. Science 252 (2006) 7228

High sensitivity analysis of atmospheric gas elements. S. Miwa, I. Nomachia and H. Kitajima. App. Surf. Science 252 (2006) 7247

SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin films. H. Haneda, T. Ohgaki, I. Sakaguchi, H. Ryoken, N. Ohashi and A. Yasumori. App. Surf. Science 252 (2006) 7265

Improved automation system for the CAMECA IMS 7f. P. Peres, A. Merkulov, E. de Chambost, M. Schuhmacher, Poster for SIMS XV, Manchester, UK, September 2005

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IMS 7f-GEO

Al-Mg systematics of hibonite-bearing Ca,Al-rich inclusions from Ningqiang. Weibiao HSU, Yunbin GUAN, and Ying WANG, Meteoritics & Planetary Science 46, Nr 5, 719–728 (2011)

Lunar apatite with terrestrial volatile abundances. Jeremy W. Boyce, Yang Liu, George R. Rossman, Yunbin Guan, John M. Eiler, Edward M. Stolper, & Lawrence A. Taylor, NATURE Vol 466, p. 466-468 (2010)

The effect of sulfate concentration on (sub)millimeter-scale sulfide δ34S in hypersaline cyanobacterial mats over the diurnal cycle. D. A. Fike et al, Geochem. et Cosmochem. Acta. 73, 6187 (2009)

High resolution SIMS-based sulfide δ34S: A new tool for characterizing microbial activity in a variety of depositional environments. D. Fike et al, Goldschmidt conference, June 2009

New capabilities for small-scale and high-precision SIMS analyses. J. M. Eiler, Goldschmidt conference, June 2009

Understanding the origin and diagenetic history of multiple sulfur isotope signals in late Archean sedimentary rocks. W. W. Fischer et al, American Geophysical Union, Fall Meeting 2008

Stable isotope variation along the direction of growth in echinoderm plates. T. A. Dexter, 2008 Joint Annual Meeting, Oct. 2008

SIMS measurements on oxygen isotopic compositions of chondrules and matrix in Yamato 691, EH3 chondrite. B.-G. Choi et al, Lunar Planet. Sci. XXXIX (2008)

SIMS-based approaches to understanding sulfur cycling over earth history. D. A. Fike et al, 2008 Fall meeting of the American Geophysical Union

Stable isotope variation between growth lines on the blastoid pentremites. T. A. Dexter, Geological Society of America, Southeastern section, 57th Annual meeting, April 2008

CAMECA IMS 7f-GEO: Specialized SIMS tool for geosciences. Paula Peres, Emmanuel de Chambost and Michel Schuhmacher. Applied Surface Science, Volume 255, Issue 4, 15 December 2008, pp 1472-1475

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IMS Wf / SC Ultra

Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants. A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588  

EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss Metrology. W.Vandervorst, R.Vos, A.J.Salima, A.Merkulov, K. Nakajimac and K.Kimura. Proceedings of the 17th International Conference on Ion Implentation Technology, IIT 2008, Monterey, CA, USA.
AIP Conf. Proc. Vol. 1066 (2008), 109-112

Semiconductor profiling with sub-nm resolution: challenges and solutions. W.Vandervorst, App. Surf. Science 255 (2008) 805

Roughness development in the depth profiling with 500eV O2 beam with the combination of oxygen flooding and sample rotation. D. Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1433

Depth profiling of ultra-thin oxynitride date dielectrics by using MCs@+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha, App. Surf. Science 255 (2008) 1437

Impurity measurement in silicon with D-SIMS and atom probe tomography. P.Ronsheim, App. Surf. Science 255 (2008) 1547.

SIMS depth profiling of boron ultra shallow junctions using oblique O2 beam down to 150eV. M.Juhel, F.Laugier, D.Delille,C.Wyon, L.F.T.Kwakman and M.Hopstaken, App. Surf. Science 252 (2006), 7211

Boron ultra low energy SIMS depth profiling improved by rotating stage. M.Bersani, D.Guibertoni, at al, App. Surf. Science 252 (2006) 7315

Comparison between SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. M.Bersani, D.Guibertoni, et al, App. Surf. Science 252 (2006) 7214

SIMS Depth Profiling of SiGe:C structures in test pattern areas using low energy Cs with a Cameca Wf , M.Juhel, F. Laugier, App. Surf. Science 231-232 (2004) 698

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers. P.A.Ronsheim, R.Loesing and A.Mada, App. Surf. Science 231-232 (2004) 762

Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

Accurate on-line depth calibration with laser interferometer during SIMS profiling experiment on the CAMECA IMS Wf instrument. O. Merkulova, A. Merkulov, M. Schuhmacher, and E. de Chambost. SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 954–958

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953

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Quadrupole SIMS

Shallow As dose measurements of 300mm patterned wafers with Secondary Ion Mass Spectrometry and Low energy Electron induced X-ray Emission Spectroscopy. H.U. Ehrke, N. Noible, M.P. Moret, F. Horreard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher, J. Vac. Sci. Technolo. B 28 (1), 1071-1023, Jan/Feb 2010

Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs. C.N. Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, J.L. Hoyt, IEEE Transactions on Electron Devices, Vol. 55, Issue 10, pp 2687-2694, October 2008

SIMS analysis of implanted and RTP annealed wafers for sub-100nm technology. H-U.Ehrke, A.Sears, W.Lerch, S.Paul, G.Roters, D.F.Downey, E.A.Arevalo. Paper at USJ 2003 published in JVST-B 22(1) Jan-Feb 2004

Quantification of Ge and B in SiGe using secondary ion mass spectrometry. H-U.Ehrke, H.Maul, Materials Science in Semiconductor Processing, Vol. 8, Issues 1-3, 2005, 111-114

Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resitive Si1-xGex alloy layers. M. G. Dowsett and al. Applied surface science, 9299 (2002) 1-4

Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. M. G. Dowsett et al, Phys. Rev. B 65, 113412 (2002)

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